TK62N60X,S1F(S

Detailed Description:

The TK62N60X,S1F(S from Toshiba is a high-performance metal-oxide-semiconductor field-effect transistor (MOSFET) designed for various applications requiring efficient power management and high reliability. This N-channel, unipolar MOSFET is rated for operation at 600V, making it an ideal choice for high-voltage power systems. With a continuous drain current (Id) of 61.8A and a pulse drain current (Idm) of up to 247A, it offers exceptional current handling capabilities. The device is capable of dissipating up to 400W, enabling it to manage high power densities effectively. Its robust design and advanced semiconductor technology ensure stability and long-term reliability, making it a preferred choice for power supplies, converters, and motor control applications. Toshiba’s commitment to quality and performance makes the TK62N60X,S1F(S a go-to MOSFET for engineers seeking high-efficiency, robust power management solutions.