TK560A65Y,S4X

Detailed Description:

The TK560A65Y,S4X MOSFET from Toshiba is a high voltage, N-Channel device designed to optimize power management in a wide array of applications. Featuring DTMOSV technology, this component is built for efficiency, with a drain-source voltage (VDSS) of 650V and a low drain power dissipation of 30 Watts. It can handle currents up to 7.0 Amps, making it suitable for applications with high breakdown voltage requirements such as switch mode power supplies (SMPS), lighting, and industrial power applications. With a capacitance of 380pF, it facilitates fast switching operations. The device is encased in a TO-220SIS package, known for its thermal and electrical performance stability. The TK560A65Y,S4X is engineered to provide reliable, long-term operation for systems requiring high voltage and power efficiency.