TH58BYG3S0HBAI6

Detailed Description:

The TH58BYG3S0HBAI6 is an 8Gb NAND EEPROM manufactured by Toshiba, designed for high-density, high-speed storage applications. It leverages Toshiba’s cutting-edge NAND technology to provide a reliable storage solution. This component is specifically engineered for applications requiring large non-volatile memory storage, such as solid-state drives (SSDs), digital cameras, smartphones, and other portable devices. The TH58BYG3S0HBAI6 features a high-speed read and write capability, making it an excellent choice for applications where data integrity and quick access are paramount. Its 8Gb capacity allows for substantial data storage within a compact footprint. The device supports a wide range of operating temperatures, making it versatile for use in diverse environmental conditions. Additionally, it incorporates error correction code (ECC) functionality, enhancing data reliability and integrity. The TH58BYG3S0HBAI6’s low power consumption also makes it ideal for battery-powered devices, where energy efficiency is critical. Toshiba’s expertise in memory technology ensures that the TH58BYG3S0HBAI6 provides a combination of high capacity, reliability, and performance for next-generation electronic devices.