Manufacturer | Toshiba Halbleiter und Speicher |
Detailed Description:
The TC55VBM316AFTN55LA is a high-speed, low-power Static Random Access Memory (SRAM) product from Toshiba. This component provides a storage capacity of 16 Mbit, catering to applications requiring fast access times and temporary data storage without the need for constant power. Its design and manufacturing are focused on delivering reliable data retention and quick retrieval, key features for applications in telecommunications, computing, and industrial control systems. The TC55VBM316AFTN55LA operates with a low voltage supply, contributing to the energy efficiency of the systems it integrates into. It supports a wide temperature range, ensuring functionality in diverse operating environments. Toshiba’s expertise in memory technology is evident in the design of the TC55VBM316AFTN55LA, making it a solid choice for developers looking for performance and reliability in their memory solutions.
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