STH80N10LF7-2AG

Detailed Description:

The STH80N10LF7-2AG is a high-performance, N-channel MOSFET developed by STMicroelectronics, a leader in semiconductor solutions. This component is designed to deliver high efficiency and power density in a wide range of applications, including power supply, automotive, and industrial systems. By utilizing ST’s advanced MDmesh™ DM7 technology, the STH80N10LF7-2AG offers an excellent on-resistance (RDS(on)) to gate charge (Qg) ratio, reducing switching and conduction losses. It features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) capability up to 80A, making it well-suited for high-power applications. The device is housed in an H2PAK-2 package, providing a compact footprint while ensuring good thermal performance. Its robust design and high reliability make it a preferred choice for design engineers looking to improve the efficiency and thermal management of their power conversion systems.