STGWA50M6DF2

Detailed Description:

The STGWA50M6DF2 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by STMicroelectronics, designed for efficient and high-power switching applications. With its impressive specs including a current rating of 100A, a low saturation voltage of 1.5 V, and a maximum power dissipation of 300W, this IGBT is well-suited for applications in power conversion and control systems such as inverter drives, power supplies, and electric vehicle propulsion systems. It features a 650 V maximum collector-emitter voltage that facilitates operation in high voltage circuits, making it an ideal choice for demanding applications. The TO-247 3-pin package offers ease of integration into various circuit designs, providing engineers with a reliable and high-performance solution for their high-power switching needs.