STGB20H65FB2

Detailed Description:

The STGB20H65FB2 is an advanced IGBT Transistor developed by STMicroelectronics, characterized by its trench gate field-stop structure. This innovative design enables the transistor to operate at a high voltage of up to 650V, making it an excellent choice for applications that demand robust power handling capabilities such as solar inverters, welding equipment, and electric vehicle chargers. It efficiently combines the high input impedance of the MOSFET and the low conduction loss of the bipolar transistor, delivering unparalleled efficiency and performance in power conversion. The trench gate field-stop technology used in the STGB20H65FB2 significantly reduces switching and conduction losses, contributing to improved energy efficiency and reduced thermal stress during operation. This IGBT transistor is designed to meet the stringent requirements of today’s high-performance power electronics systems, offering manufacturers a reliable and cost-effective solution for their high-voltage power conversion needs.