Manufacturer | Toshiba Halbleiter und Speicher |
Detailed Description:
The SSM6L36FE,LM(B MOSFET from Toshiba is a high-performance, advanced metal-oxide-semiconductor field-effect transistor designed to provide efficient power management and switching with minimal power loss. This component is part of Toshiba’s commitment to delivering semiconductor solutions that enhance energy savings and reduce environmental impact. The SSM6L36FE,LM(B MOSFET is characterized by its low on-resistance and high switching speed, making it suitable for a broad spectrum of applications, including power supplies, motor controls, and high-speed switching circuits. Its compact form factor allows for a reduction in PCB size, providing more freedom in the design of compact and efficient electronic devices. The use of advanced semiconductor technology ensures that this MOSFET operates with high reliability and performance, making it an excellent choice for designers who prioritize energy efficiency and robust operation in their electronic projects.
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