SSM6K819R

Detailed Description:

The SSM6K819R is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed and manufactured by Toshiba. This electronic component belongs to the broad category of semiconductors, specifically within the MOSFET subtype, known for its efficient control over power and voltage through a non-mechanical process. The SSM6K819R is characterized by its high reliability and performance in various applications, including switching applications and power management solutions. This MOSFET is designed to offer low on-resistance and high-speed switching characteristics, making it suitable for high-efficiency power supplies, motor controls, and other energy-sensitive electronics. The compact and robust design of the SSM6K819R allows for a reduced footprint on printed circuit boards (PCBs), making it a favorable choice for space-constrained applications. Toshiba’s advanced fabrication techniques ensure this component delivers consistent performance and durability, meeting the stringent requirements of modern electronic devices.