SI1869DH-T1-BE3

Detailed Description:

Identical in performance and applications to the SI1869DH-T1-E3, the SI1869DH-T1-BE3 is an excellent P-Channel MOSFET from Vishay’s renowned line of TrenchFET® power semiconductors. Designed specifically for low-voltage applications necessitating 1.8 V, it excels in environments where power efficiency and high-speed operation are critical. Its TrenchFET technology ensures outstanding thermal management and lower on-resistance, which translates to reliable performance in tight spaces. Common applications include but are not limited to battery management systems, load switches, and dc-dc converters. The SI1869DH-T1-BE3 continues Vishay’s tradition of providing leading-edge components for power management applications in the consumer electronics, telecommunications, and automotive industries.