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RMLV0816BGSB-4S2

Part No RMLV0816BGSB-4S2
Manufacturer Renesas Electronics America
Catalog IT infrastructure Memory
Description The Renesas RMLV0816BGSB-4S2 is an 8Mb Advanced SRAM module, configured as x16, with a 45ns access time and 3V operation, housed in a TSOP44 package.
Rohs State Need to verify

Category IT-Infrastruktur Speicher
Manufacturer Renesas Elektronik Amerika

Detailed Description:

The RMLV0816BGSB-4S2 is an SRAM device manufactured by Renesas, offering 8Mb of memory storage with a configuration designed for high-speed and efficient operation. Operating at a voltage of 3V, it strikes a balance between power consumption and performance, suitable for a wide range of electronics applications. The ‘Adv.SRAM’ tag suggests improvements over conventional SRAMs in terms of speed, reliability, or power efficiency. With its x16 configuration, it provides a good compromise between data width and chip size, allowing for faster data access times compared to narrower configurations. Packaged in a TSOP44 (Thin Small-Outline Package), it is designed for compactness and can be easily integrated into systems with limited space. The 45ns access time and WTR (Write-Through-Rate) feature reflect its focus on speed and performance, making it an excellent choice for systems requiring quick data retrieval and storage, such as embedded systems, gaming consoles, and industrial controls.

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