PD85035STR1-E

Detailed Description:

The PD85035STR1-E is a state-of-the-art RF power transistor designed by STMicroelectronics for use in a wide range of telecommunication applications. This N-channel LDMOS transistor is optimized for high-frequency operation, making it an ideal choice for RF power amplification in mobile radio and other wireless communication systems. It features outstanding efficiency and gain characteristics, achieving high-output power with minimal input drive. The PD85035STR1-E operates across a broad frequency spectrum, enabling versatile use in different communication bands. Its excellent thermal performance and ruggedness ensure reliable operation, even under demanding conditions. The device is housed in a plastic package, providing a cost-effective solution while maintaining high performance and reliability. It supports both analog and digital modulation schemes, offering flexibility in system design. This RF power transistor is widely used in amplifiers, repeaters, and base station applications, offering a high-performance solution that meets the stringent requirements of modern wireless communication systems.