MB85RS4MTYPN-G-AWEWE1

Detailed Description:

The MB85RS4MTYPN-G-AWEWE1 by Fujitsu is a high-performance, 4 megabit (Mb) Ferroelectric Random Access Memory (FRAM) device. Integrated with a 512Kx8 configuration, this memory module offers the robust features of FRAM technology, which include low power consumption, high-speed write operations, and excellent endurance compared to traditional non-volatile memories. The product operates over a wide voltage range and is ideal for applications requiring frequent or rapid data updates, such as industrial control systems, medical monitoring devices, and modern metering equipment. Its ferroelectric property ensures data retention without the need for a battery, making it an eco-friendly choice for designers looking to optimize their hardware for sustainability and reliability.