Category | IT-Infrastruktur Speicher |
Manufacturer | Fujitsu Elektronik Amerika, Inc. |
Detailed Description:
The MB85RS4MTPF-G-BCE1 is a 4-megabit (Mb) non-volatile memory component from Fujitsu, utilizing the advanced Ferroelectric RAM (F-RAM) technology. This memory chip has a configuration of 512K words by 8 bits, providing a high-capacity data storage solution that combines the benefits of non-volatile memory with high-speed read/write operations. F-RAM technology ensures data integrity even in the event of sudden power loss, making it an ideal choice for critical data logging applications in fields such as industrial automation, medical devices, and automotive systems. Additionally, this F-RAM component features low power consumption and high endurance, supporting up to 10^12 read/write cycles, which significantly surpasses the endurance of traditional EEPROM. Its robust design and performance under extreme environmental conditions make it a reliable choice for sophisticated electronic systems requiring long-term data retention without compromising data access speeds.
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