K9WAG08U1A-IIB0

Detailed Description:

The K9WAG08U1A-IIB0 from Samsung is a NAND flash memory chip that offers a substantial 16 gigabits (Gb) of storage using multi-level cell (MLC) technology. This technology allows it to store more information per cell than single-level cell (SLC) chips, making it an efficient choice for mass storage requirements. It’s designed in a 48-pin thin large array package (TLGA), which is ideal for space-constrained applications. With its significant storage capacity and compact form factor, the K9WAG08U1A-IIB0 is perfect for use in consumer electronics, such as digital cameras, MP3 players, and smartphones, as well as in SSDs for both personal and enterprise storage solutions. Samsung’s NAND flash memory chips are renowned for their high quality, durability, and performance, featuring fast read and write speeds and substantial endurance. The K9WAG08U1A-IIB0 incorporates these characteristics, making it a reliable option for developers looking to incorporate significant storage capabilities into their applications with confidence in their data’s integrity and longevity.