K9W4G08U1M-YCB0

Detailed Description:

The Samsung K9W4G08U1M-YCB0 is a 4Gb NAND Flash memory chip, designed for high-capacity storage solutions. With its NAND architecture, it is optimized for the storage of large volumes of data, including multimedia files, applications, and system backups. The K9W4G08U1M-YCB0 utilizes a x8 interface and operates on a 3.3V power supply, offering efficient energy consumption and compatibility with a broad range of electronic devices. Its ‘YCB0’ version indicates specific performance characteristics and package type, catering to specialized requirements. Samsung’s technology ensures high endurance and reliability, with significant emphasis on write performance, error correction, and wear-leveling algorithms to extend the lifespan of the memory. Ideal for portable devices, SSDs, and other storage-intensive applications, this NAND Flash memory provides a blend of capacity, speed, and durability. Its integration into consumer electronics, automotive systems, and industrial equipment underscores its versatility and the confidence manufacturers place in Samsung’s memory solutions.