K9T1G08U0M-YIB0

Detailed Description:

The Samsung K9T1G08U0M-YIB0 is a high-performance NAND flash memory device, boasting a storage capacity of 1 gigabit (Gb). This component is designed using advanced memory technology, allowing it to achieve a structure of 128 megabits (M) by 8, which significantly enhances its data storage density and reliability. It falls under the industrial temperature (IT) category, making it suitable for applications that require operation in extreme conditions. This particular model of NAND flash memory is well-suited for a wide range of applications, including but not limited to, digital media devices, portable media players, and advanced mobile devices that necessitate substantial, reliable storage solutions. Its NAND architecture offers advantages such as higher write speeds, a greater number of write cycles (endurance), and lower power consumption compared to traditional NOR flash memory. Samsung, as the manufacturer, is renowned for its leadership and innovation in the semiconductor industry, ensuring that this memory component delivers superior performance and reliability.