K9PFGD8U5M-HCE00

Detailed Description:

The Samsung K9PFGD8U5M-HCE00 represents the pinnacle of NAND Flash memory technology with its staggering 256Gb capacity. Crafted for high-performance and enterprise-level applications, this flash memory is structured as 32Gx8 MLC (Multi-Level Cell) and is manufactured using Samsung’s advanced 32nm process technology. It features a toggle DDR (Double Data Rate) interface which facilitates high-speed data transfers, a crucial aspect for applications requiring swift access to large volumes of data such as server farms, high-end computing devices, and network storage systems. Its design also includes ODP (One-Die-Per Chip) technology and comes in a FBGA136 (Fine-Pitch Ball Grid Array) package, underscoring its suitability for space-constrained yet demanding environments. The K9PFGD8U5M-HCE00 is the embodiment of Samsung’s dedication to providing robust, leading-edge flash storage solutions tailored for enterprise applications, emphasizing reliability, speed, and capacity.