K9K2G16U0M-YIB0T00

Detailed Description:

The K9K2G16U0M-YIB0T00, designed and produced by Samsung, is an advanced 2Gb NAND Flash memory chip with a configuration of 128Mx16, indicating a 128 megaword by 16-bit organization. This memory component falls within the NAND/NOR Flash Memory subcategory, leaning towards the NAND type, known for its high density and capacity. This type of Flash memory is integral in applications that demand significant amounts of data storage such as solid-state drives, memory cards, and high-end smartphones. Its ‘Ind’ specification suggests industrial temperature range capabilities, making it viable for use in environments that require robust performance under various temperature conditions. Samsung’s K9K2G16U0M-YIB0T00 boasts advanced technology that optimizes it for fast data writing and erasing capabilities, which is critical for applications requiring high-speed data processing and storage. Its efficient design and fabrication ensure lower power consumption, enhanced durability, and reliability, making it an excellent choice for consumer electronics, industrial applications, and automotive systems. Samsung, as a leading manufacturer in the semiconductor industry, ensures that this NAND Flash memory chip embodies the quality and innovative technology the company is known for.