Manufacturer | Samsung |
Category | IT-Infrastruktur Speicher |
Detailed Description:
The K9G8G08U0D-SIB0 from Samsung stands out as a high-capacity NAND Flash memory solution, incorporating 8Gb (1GB) of storage space through a multi-level cell (MLC) design configured in a 1Gx8 architecture. Leveraging the MLC technology, this product skillfully balances cost and performance, offering an effective solution for storing large quantities of data in a small physical space. It is well-suited for applications spanning from personal computing devices to advanced digital platforms that require considerable memory without a significant investment. While it provides a lower cost per bit than SLC-based memories, the K9G8G08U0D-SIB0 does not significantly sacrifice performance or reliability, rendering it competitive for consumer electronics, mobile devices, and some industrial applications where higher storage capacity at a reasonable cost is a key consideration. Its design and technological attributes exemplify Samsung’s commitment to delivering cutting-edge storage solutions that cater to the evolving needs of the technology landscape.
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