Manufacturer | Samsung |
Category | IT-Infrastruktur Speicher |
Detailed Description:
The K9F1G08U0M-YP from Samsung is a NAND Flash Memory component featuring a 1 Gigabit capacity, configured as 128 Megabits by 8. This memory device is ideal for applications requiring high-density, non-volatile storage solutions, such as SSDs, mobile devices, and various forms of consumer electronics. It is designed to offer robust performance, including fast data transfer speeds, high reliability, and superior endurance for read/write cycles, meeting the needs of intensive applications. With its industry-standard packaging, the K9F1G08U0M-YP ensures compatibility with a broad range of electronic assemblies, facilitating seamless integration into system designs. Samsung’s advanced manufacturing and memory technology stand behind this component, providing a high-quality storage solution that enhances the capabilities and performance of a wide array of electronic products. Its features and reliability underscore the evolution of memory storage technology, reflecting Samsung’s role in advancing the efficiency and capabilities of modern electronic devices.
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