K9F1G08U0M-YIB0

Detailed Description:

The K9F1G08U0M-YIB0 is a 1Gb NAND Flash memory chip by Samsung, designed for high-density storage applications. Featuring a 128Mx8 configuration and built using a 0.12um process technology, it represents a leap forward in storage technology, offering both high capacity and efficiency in a compact form factor. This NAND Flash memory is suited for use in a wide range of digital applications, from USB flash drives to more complex solid-state storage solutions. The ‘YIB0’ suffix might indicate specific operational parameters such as speed or temperature resilience. Samsung’s expertise in NAND technology ensures that this memory chip provides reliable data retention and speed, necessary for today’s high-demand storage requirements, blending performance with reliability to meet the increasing needs of modern electronics.