K9F1G08U0B-SIB0

Detailed Description:

The K9F1G08U0B-SIB0 is a high-capacity 1Gb NAND Flash memory chip designed by Samsung, utilizing a Single-Level Cell (SLC) architecture that stores one bit of information per cell. This design choice ensures superior read and write speeds, reliability, and longevity of the memory chip, making it particularly well-suited for mission-critical applications in industrial, automotive, and networking environments. It supports a 128Mx8 configuration, enabling efficient data management and storage. This model is also recognized for its robust error correction capabilities and endurance, ensuring data integrity over an extended period. The K9F1G08U0B-SIB0 represents Samsung’s commitment to high-quality memory solutions that cater to a wide range of requirements, from basic storage needs to highly demanding data processing tasks.