Manufacturer | Samsung |
Category | IT-Infrastruktur Speicher |
Detailed Description:
The K9F1G08U0B-PIB0T by Samsung is an advanced 1Gb NAND Flash memory component, specifically designed for the storage of large volumes of data in a wide range of electronic applications. This Single-Level Cell (SLC) NAND Flash offers unparalleled reliability and speed, with a storage configuration of 128M x 8 bits, making it highly suitable for high-performance computing and industrial applications. The SLC technology ensures higher write speeds, endurance, and data integrity when compared to multi-level cell (MLC) NAND Flash, making it an exceptional choice for critical systems requiring robust data storage solutions. Moreover, the device features advanced wear-leveling and bad block management, which significantly increases its operational lifespan and reliability. Encased in a Pb-free package, the K9F1G08U0B-PIB0T not only meets environmental standards but also provides a low-power, high-reliability solution for demanding applications such as embedded systems, automotive electronics, and networking infrastructure. Samsung’s commitment to excellence is evident in the device’s performance, ensuring it remains a leading choice for developers seeking high-quality NAND Flash memory.
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