Category | IT-Infrastruktur Speicher |
Manufacturer | Samsung |
Detailed Description:
The K9F1G08R0B-JCB0 from Samsung is a NAND Flash Memory component, boasting a storage capacity of 1 Gigabit configured as 128 Megabits by 8. This electronic part is encapsulated in an FBGA package, designed for high-performance and high-density storage applications. It is particularly suited for use in consumer electronics, mobile devices, and any application that demands large non-volatile memory in a compact form factor. The K9F1G08R0B-JCB0 is built to offer exceptional read and write speeds, along with low power consumption, making it a sustainable choice for devices that require efficient power management. Samsung, known for pushing the boundaries in memory technology, ensures that this flash memory chip provides reliable data retention and endurance, catering to the needs of sophisticated electronic solutions. The chip’s design and functionality make it an integral component for enhancing the storage capabilities and performance of a wide range of devices.
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