K9ABGD8U0B-W00000

Detailed Description:

The K9ABGD8U0B-W00000 is another innovative NAND Flash memory solution from Samsung, featuring a 32Gb (4GB) storage capacity configured in a 4Mx8 Triple-Level Cell (TLC) DDR layout. This memory chip is designed to address the growing need for high-density, cost-effective storage solutions in the consumer electronics market. The use of TLC technology allows this chip to store three bits of data per cell, significantly increasing the density and reducing the cost per bit of storage. The integration of DDR interface technology enhances the data transfer rate, making this memory chip particularly suitable for applications requiring both high storage capacity and fast data access, such as solid-state drives, smartphones, and digital media players. The K9ABGD8U0B-W00000 represents Samsung’s commitment to advancing NAND Flash technology, offering a blend of performance, capacity, and affordability.