K7B403625B-QC80

Detailed Description:

Samsung’s K7B403625B-QC80 is a high-performance 4M Sync Burst SRAM with a configuration of 128Kx36, designed to meet the high-speed data transfer and storage needs of advanced computing systems. This component combines the advantages of synchronous burst technology with the reliability and efficiency Samsung is known for. The Sync Burst feature allows for bursts of data to be read or written in rapid succession, significantly speeding up data access times and improving overall system performance. This SRAM’s architecture, featuring a 128Kx36 configuration, makes it suitable for high-bandwidth applications requiring fast and efficient memory access, such as high-end computing, networking equipment, and telecommunications infrastructure. The K7B403625B-QC80 exemplifies Samsung’s expertise in memory technology, offering system designers a reliable, high-speed memory component that can enhance the performance of sophisticated electronic systems.