K6F8016U6B-EF55

Detailed Description:

The K6F8016U6B-EF55 is an advanced static RAM (SRAM) memory chip developed by Samsung. It features a storage capacity of 512 kilowords by 16 bits, totaling 8 megabits of data storage. This device combines high speed and low power consumption, operating with a 3.3 volts power supply. The SRAM’s access time is tuned for high-speed performance, making it an ideal choice for demanding applications in computing, networking, and digital signal processing. The K6F8016U6B-EF55 is designed to support a wide range of operating temperatures, making it suitable for use in both commercial and industrial environments. Its small form factor and surface-mount package enable efficient utilization of board space, crucial for modern electronic devices. Samsung’s commitment to quality ensures that this SRAM provides reliable storage, suitable for applications requiring fast data access and high reliability, such as embedded systems, automotive electronics, and portable devices.