K4T51162QI-HCE6

Detailed Description:

The K4T51162QI-HCE6 is a cutting-edge DDR2 DRAM component crafted by Samsung, aiming to meet the high demands of modern computing devices. DDR2 DRAM, standing for Double Data Rate 2 Dynamic Random-Access Memory, is an evolution of DDR memory technology with improvements in speed, power consumption, and overall efficiency. This Samsung memory chip is engineered to provide enhanced performance for a wide array of applications including personal computers, laptops, and other digital devices requiring high-speed data processing capabilities. With its advanced manufacturing technology, the K4T51162QI-HCE6 delivers superior reliability and performance. Its capabilities are tailored to support complex computing tasks, ensuring smooth operation and better multitasking abilities. Samsung’s reputation for innovation and quality is evident in this memory component, making it a preferred choice for system builders and consumers looking to upgrade their device’s memory. Offering a blend of speed, durability, and low power consumption, this DDR2 DRAM module represents a refined solution for achieving improved system responsiveness and efficiency in data handling.