IXFK64N60P3

Detailed Description:

The IXFK64N60P3 is a high voltage, high current MOSFET developed by IXYS, a leader in power semiconductor technology. This device is designed for optimal performance in power conversion and management applications, featuring a drain-source voltage of 600V and a continuous drain current of 64A. Its exceptionally low on-resistance of 0.095Ohm minimizes power losses, making it highly efficient for use in high-power applications such as inverters, converters, and power supply units. The PolarP3 technology incorporated in the IXFK64N60P3 ensures robust performance under extreme conditions, offering enhanced reliability and lifespan. Its implementation in power electronic systems demonstrates IXYS’s dedication to providing advanced, reliable solutions for managing and converting power in industrial, commercial, and renewable energy applications.