IS61WV25616BLL-10BI

Detailed Description:

The IS61WV25616BLL-10BI is a high-speed, low-power Static Random Access Memory (SRAM) module developed by Integrated Silicon Solution, Inc. (ISSI). Offering a memory capacity of 4Mb (256Kx16), this SRAM operates at a swift access time of 10 nanoseconds, making it well-suited for applications requiring fast data retrieval and storage without the need for refresh operations typical of Dynamic RAM (DRAM). The module is packaged in a compact Ball Grid Array (BGA), optimizing space on printed circuit boards and enabling high-density memory solutions. This SRAM’s design and efficiency make it ideal for telecommunications, computing, and industrial applications where speed and reliability in memory operations are paramount.