IPW60R180C7

Detailed Description:

The IPW60R180C7 by Infineon is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for exceptional efficiency and power handling in a wide array of electrical applications. Its 600V drain-to-source voltage rating makes it particularly suitable for high voltage applications such as power conversion, AC-DC and DC-DC converters, as well as for renewable energy systems including solar inverters and wind turbines. This MOSFET leverages Infineon’s sophisticated CoolMOS™ C7 technology, providing extremely low on-resistance and capacitance, which translates into superior switching performance and reduced energy losses. It’s engineered for applications that demand high efficiency, compact designs, and minimal heat generation. The IPW60R180C7 is a testament to Infineon’s commitment to providing power solutions that help reduce global energy consumption and enable more sustainable technology advancements.