IPT039N15N5

Detailed Description:

The IPT039N15N5 is a cutting-edge MOSFET developed by Infineon, specialized for high-performance applications requiring high-speed switching and high current capacity. This N-Channel MOSFET is a compelling choice for power regulation purposes, boasting a drain-source voltage of 150V and a remarkably high current carrying capacity of 190A. Packaged in an 8-Pin HSOF form factor, this transistor is designed for thermal efficiency and reduced resistance, enabling high power density solutions. Ideal for a broad range of applications including but not limited to DC-DC converters, motor drives, and power management systems, the IPT039N15N5 excels in scenarios demanding reliability, efficiency, and performance. Infineon’s dedication to innovation is evident in this component, offering a seamless blend of power handling and operational efficiency to engineers and designers aiming to push the boundaries of electrical designs.