IPB60R040C7

Detailed Description:

The IPB60R040C7 is a high power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) from Infineon, known for its exceptional performance and efficiency. It is part of the company’s innovative portfolio designed for high power applications requiring reliable and robust power management solutions. This MOSFET features a groundbreaking design that significantly reduces on-resistance and maximizes power density, making it ideal for demanding applications such as power supplies, solar inverters, and electric vehicles. With its ability to handle high currents while maintaining efficiency, the IPB60R040C7 is a cornerstone in the development of energy-efficient power systems, embodying Infineon’s dedication to advancing technology for a sustainable future.