IDH02G65C5

Detailed Description:

The IDH02G65C5 is a state-of-the-art Silicon Carbide (SiC) Schottky diode designed by Infineon for high-efficiency power conversion applications. With a voltage rating of 650V and a current capacity of 2A, this diode is engineered to handle high energy and temperature environments typical in power supply and converter circuits. The SiC material allows for significantly lower reverse recovery time and forward voltage drop compared to traditional silicon-based diodes, resulting in improved performance and energy savings. Housed in a 2-Pin(2+Tab) TO-220 package, it provides a compact solution without compromising power handling capability. Its robust design ensures reliability and long-term stability, making it an ideal choice for power conversion in industrial, automotive, and renewable energy applications. Infineon’s commitment to quality and innovation is evident in the IDH02G65C5, making it a top pick for engineers and designers seeking an effective solution for high-efficiency power systems.