HY638256J-20

Detailed Description:

The HY638256J-20 from Hyundai is a Static Random Access Memory (SRAM) module with a memory capacity of 32K x 8 bits, indicating it can store up to 256 kilobytes of data. This component uses a SOJ (Small Outline J-lead) packaging, favorable for its compact profile and straightforward PCB assembly processes. Operating with a 20ns access time, this SRAM offers high-speed data retrieval and storage. Unlike DRAM that requires periodic data refresh, SRAM maintains data integrity as long as power is supplied, making it ideal for applications where fast access and data stability are crucial, such as cache memory in computers, high-performance networking devices, and various embedded systems. The HY638256J-20’s efficient design and reliability underscore Hyundai’s commitment to quality in producing semiconductor solutions that meet the rigorous demands of contemporary electronic devices.