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H27Q2T8QEA9R-BDG

Part No H27Q2T8QEA9R-BDG
Manufacturer Hynix Semiconductor
Catalog IT infrastructure Memory
Description The Hynix H27Q2T8QEA9R-BDG is a 2Tb (Terabit) NAND Flash memory employing TLC (Triple-Level Cell) technology, designed for use in IT infrastructure systems.
Rohs State Need to verify

SKU: 1452464
Brand:
Manufacturer Hynix-Halbleiter
Category IT-Infrastruktur Speicher

Detailed Description:

The H27Q2T8QEA9R-BDG by SK hynix is a cutting-edge, 2-terabit (Tb) triple-level cell (TLC) NAND flash memory product, crafted to meet the stringent demands of high-capacity data storage solutions. This memory component is ideal for a wide range of applications, from premium SSDs to next-generation mobile devices, offering a blend of high density, exceptional performance, and cost-effectiveness. Employing TLC technology, the H27Q2T8QEA9R-BDG allows for storing more bits per cell, effectively increasing the storage density and reducing the cost per gigabyte, all while maintaining competitive read and write speeds. Additionally, SK hynix’s expertise in memory technology ensures that this product offers excellent durability and endurance, critical attributes for devices requiring reliable long-term storage. Its integration into storage solutions underlines a commitment to driving the future of digital storage forward, providing users with the capacity to store vast amounts of data without compromising on performance or reliability.

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