FS100R12KT4P

Detailed Description:

The FS100R12KT4P is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) module from Infineon, boasting a 1200V collector-emitter voltage capability. This component is engineered for high-efficiency and high-power applications, offering outstanding electrical performance. The module integrates multiple IGBTs in a compact package, facilitating easier and more reliable assembly for applications such as electric vehicle drives, industrial motor drives, and power inverters for renewable energy systems. The FS100R12KT4P exemplifies Infineon’s commitment to providing advanced power semiconductor solutions that enable more efficient energy conversion processes, thereby helping in the reduction of energy losses and the improvement of system reliability.