FGH40T120SMD-ND

Detailed Description:

The FGH40T120SMD-ND, produced by onsemi (formerly ON Semiconductor), is an IGBT (Insulated Gate Bipolar Transistor) characterized by its TRENCH/FS technology designed for 1200V, 80A applications within a TO247-3 package. This IGBT combines the easy drive characteristics of a MOSFET with the high current and low saturation voltage capability of a bipolar transistor, allowing for efficient power switching and control. Its design focuses on minimizing conduction and switching losses, making it suitable for high-voltage and high-power applications such as inverter drives, UPS systems, and solar inverters. The incorporation of trench technology enhances device performance by increasing the cell density, which decreases on-state voltage drop (Vce(sat)) and improves efficiency. The FGH40T120SMD-ND is an excellent choice for designers seeking to achieve more energy-efficient solutions in power conversion and management systems.