BSS83PH8157

Detailed Description:

The BSS83PH8157 is a high-efficiency P-Channel MOSFET produced by Infineon Technologies, specifically designed for low-voltage switching and power management applications. This device, housed in a compact SOT-23-3 package, is particularly well-suited for space-constrained applications where efficiency and reliability are key. Operating at voltages up to -20V, the BSS83PH8157 is capable of conducting moderate current levels, making it an ideal choice for load switching and power management in portable devices, as well as for other applications where high switch density is required. It features low on-state resistance, reducing power losses during operation and improving system efficiency. Moreover, the MOSFET’s robust build ensures reliability and longevity, making it a versatile and durable option for various electronic systems. Infineon’s BSS83PH8157 is a testament to the company’s innovation in developing power semiconductors that offer compact size without compromising performance or reliability.