BSM75GAL120DN2

Detailed Description:

The BSM75GAL120DN2 is a robust IGBT (Insulated Gate Bipolar Transistor) module crafted by Infineon Technologies. Designed to handle high voltages up to 1200V with a current capacity of 75A, it is an indispensable component in the sphere of power electronics. Its primary application encompasses areas that demand efficient power conversion and control including but not limited to variable speed drives, uninterruptible power supplies, and electric vehicle propulsion systems. The CHOPPER configuration of the BSM75GAL120DN2 allows for improved switching speeds and reduced energy dissipation during operation, which in turn leads to enhanced overall efficiency and reliability of the systems it is employed in. Infineon’s innovative IGBT technology incorporated within the BSM75GAL120DN2 ensures a fine balance between conduction and switching losses, making it a go-to option for developers looking to optimize their power electronic circuits for performance and energy efficiency.