241157_K9F1208U0A-YCB0

Detailed Description:

The 241157_K9F1208U0A-YCB0 is a 512Mb NAND Flash memory chip with a configuration of 64Mx8, operating within a voltage range of 2.7~3.6v, designed by Samsung. As part of the specialized Flash Memory [NAND/NOR] category, this memory device stands out for its optimized power efficiency and compatibility with a broad spectrum of electronic devices. The specifics, such as the 512Mb storage capacity and the operating voltage range, highlight the chip’s suitability for applications in consumer electronics, notably in areas demanding compact, energy-efficient storage solutions such as mobile phones, digital cameras, and portable media players. Samsung’s NAND Flash technology facilitates improved memory density, which translates into smaller chip sizes capable of delivering significant storage capacities. Moreover, the inclusion of a wide operating voltage range ensures adaptability with various system designs, enhancing design flexibility for engineers. The 241157_K9F1208U0A-YCB0 represents Samsung’s commitment to advancing flash memory technology, embodying features like endurance, lower power consumption, and broad compatibility, making it an appealing option for manufacturers aiming to elevate their products with high-quality memory components.