1SS367,H3F(T

Detailed Description:

The 1SS367,H3F(T) by Toshiba is a small-signal Schottky Barrier Diode designed for high-speed switching and rectification applications. Its low forward voltage drop and fast reverse recovery time make it highly efficient in circuits requiring high-frequency operation. The Schottky diode is suitable for use in RF applications, high-speed logic circuits, and power management systems where efficient performance is critical. Its small package size enables compact design footprints, while its low power loss characteristics improve overall system efficiency. Manufactured by Toshiba, the 1SS367,H3F(T) diode is built to high quality standards, ensuring reliability and performance in demanding electronic applications.