1MBI1200VC-170E

Detailed Description:

The 1MBI1200VC-170E is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It is designed to handle high voltages up to 1700V and currents up to 1200A. This power module is especially suitable for applications requiring high efficiency and fast switching, such as inverters, converters, and motor drives in industrial settings. The IGBT technology ensures that the 1MBI1200VC-170E provides a perfect balance between the high input impedance and high-speed switching capabilities of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and the high voltage and current handling capabilities of bipolar transistors. It is known for its durability, reliability, and low power loss, making it a key component in power management and conversion applications where performance and efficiency are critical.