TPN1110ENH,L1Q(M

Detailed Description:

The TPN1110ENH,L1Q(M) represents Toshiba’s expansion in semiconductor technology with its UMOSVIII 200V 126m (VGS=10V) TSON-ADV MOSFET. This product is designed to deliver high efficiency and reliability in power management tasks. Leveraging Toshiba’s cutting-edge UMOS VIII technology, it achieves outstanding switching performance and low on-resistance, which are critical for reducing power losses in various applications, including industrial, computing, and automotive sectors. Packaged in a compact, high-performance TSON-ADV package, this MOSFET ensures thermal efficiency and is designed for applications requiring high power density and efficiency.