TC55VCM416BTGN55LB

Detailed Description:

The TC55VCM416BTGN55LB stands out as a high-performance CMOS Static Random Access Memory (SRAM) made by Toshiba, showcasing the company’s strong foothold in memory technology. This product is engineered for high-speed operation and features a capacity of 4Mbit, making it well-suited for applications requiring fast access to a considerable amount of data, such as advanced computing systems, high-speed networking equipment, and digital signal processing units. The TC55VCM416BTGN55LB operates with low power consumption, a critical factor in extending battery life in portable devices and reducing energy costs in stationary systems. Additionally, this SRAM comes in a compact package, which is a significant advantage for system designers aiming to reduce the overall size of their electronic products. Toshiba’s commitment to durability and reliability is evident in this SRAM’s design, ensuring stable operation and long-term data integrity, making the TC55VCM416BTGN55LB a reliable choice for system developers and manufacturers seeking high-quality memory solutions.