IPD95R2K0P7

Detailed Description:

The IPD95R2K0P7 by Infineon is a low-power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for efficient power management and conversion. Part of Infineon’s innovative portfolio, it is engineered to cater to a wide range of applications requiring high efficiency and reliability. This component leverages advanced MOSFET technology to achieve reduced on-resistance and lower switching losses, which are critical for enhancing the overall efficiency of electronic circuits. The IPD95R2K0P7’s low power consumption makes it an ideal choice for battery-operated devices, power supplies, and energy-sensitive applications. Its compact form factor and robust design ensure reliability and longevity, making it a preferred choice for designers and engineers looking to optimize their power management solutions.