IPB110P06LM

Detailed Description:

Infineon’s IPB110P06LM represents the pinnacle in Trench MOSFET technology tailored for applications requiring a voltage range of 40 to 100V. This Metal-Oxide-Semiconductor Field-Effect Transistor is engineered to provide a balance between low on-resistance and high switching speeds, making it a vital component in power regulation and conversion systems. Its trench technology is pivotal for achieving an enhanced performance by reducing the size and, consequently, the cost of power electronic systems. The IPB110P06LM is suitable for a variety of applications, including, but not limited to, switch-mode power supplies, power converters, and motor drives. It offers significant improvements in power efficiency, thermal management, and overall reliability, making it a key solution for engineers looking to optimize their designs for performance and cost. Infineon’s commitment to innovation is embodied in the IPB110P06LM, catering to the evolving needs of modern power electronics.