IPU60R1K5CEAKMA2

Detailed Description:

The IPU60R1K5CEAKMA2 by Infineon is an advanced N-Channel MOSFET that offers a 650V drain-source voltage and a 5A continuous drain current, encapsulated in a 3-Pin(3+ Tab) TO-251 package. This device is designed for high efficiency and power density in various applications, including switch-mode power supplies (SMPS), lighting applications, AC-DC converters, and more. The IPU60R1K5CEAKMA2 is part of Infineon’s portfolio of energy-efficient semiconductors, designed to reduce losses and improve reliability in high-voltage power circuits. It features a low on-resistance and a high transconductance efficiency, which contribute to its exceptional performance in both hard switching and soft switching applications. Additionally, its TO-251 package is designed to optimize thermal performance and allow for easier integration into a wide range of electronic systems. The IPU60R1K5CEAKMA2 is a testament to Infineon’s commitment to providing innovative semiconductor solutions that meet the demanding requirements of modern power electronic designs.