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HY27UF081G2A-TPCB-G/D

Part No HY27UF081G2A-TPCB-G/D
Manufacturer Hynix Semiconductor
Catalog IT infrastructure Memory
Description The HY27UF081G2A-TPCB-G/D is a 1Gb NAND flash memory component from Hynix Semiconductor, featuring a 128Mx8 single-level cell (SLC) design.
Rohs State Need to verify

SKU: 1453507
Brand:
Category IT-Infrastruktur Speicher
Manufacturer Hynix-Halbleiter

Detailed Description:

SK hynix’s HY27UF081G2A-TPCB-G/D represents a potent solution in the realm of flash memory, offering 1Gb of NAND flash memory organized as 128Mx8 bits, utilizing Single-Level Cell (SLC) technology. This technology choice underscores the chip’s emphasis on reliability and rapid access speeds, primary considerations for systems where data integrity and efficiency are paramount. The SLC design means each cell stores only a single bit, offering the highest endurance and performance level available in NAND technologies. This makes the HY27UF081G2A-TPCB-G/D an ideal choice for industrial applications, high-reliability data logging, and systems requiring prolonged lifecycle support with consistent performance over time. With its focus on quality and durability, coupled with SK hynix’s reputation for excellence in the semiconductor industry, this flash memory chip is tailor-made for demanding applications where compromise is not an option. Its compact form factor and compatibility with established standards ensure easy integration into a wide variety of product designs, further enhancing its appeal to engineers and product developers alike.

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